The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1316CV18 and two 9-bit words in the case of CY7C1916CV18 that burst sequentially into or out of the device. The burst counter always starts with a `0' internally in the case of CY7C1316CV18 and CY7C1916CV18. For CY7C1318CV18 and CY7C1320CV18, the burst counter takes in the least significant bit of the external address and bursts two 18-bit words (in the case of CY7C1318CV18) of two 36-bit words (in the case of CY7C1320CV18) sequentially into or out of the device.