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Partname:CY7C1315JV18-300BZC
Description:18-Mbit QDR II SRAM 4-Word Burst Architecture
Manufacturer:Cypress Semiconductor
Datasheet:PDF (689K).
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The CY7C1311JV18, CY7C1911JV18, CY7C1313JV18, and CY7C1315JV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to eliminate the need to `turnaround' the data bus required with common IO devices. Access to each port is accomplished through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II read and write ports are completely independent of one another. In order to maximize data throughput, both read and write ports are provided with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1311JV18) or 9-bit words (CY7C1911JV18) or 18-bit words (CY7C1313JV18) or 36-bit words (CY7C1315JV18) that burst sequentially into or out of the device. Because data is transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus `turnarounds'.

Click here to download CY7C1315JV18-300BZC Datasheet
Click here to download CY7C1315JV18-300BZC Datasheet
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