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Partname: | CY7C1276V18-375BZI |
Description: | 36-Mbit QDR???-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
Manufacturer: | Cypress Semiconductor |
Datasheet: | PDF (1.23M). Click here to download *) |
The CY7C1261V18, CY7C1276V18, CY7C1263V18, and CY7C1265V18 are 1.8V Synchronous Pipelined SRAMs, equipped with Quad Data Rate-II+ (QDR-II+) architecture. QDR-II+ architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to "turn around" the data bus required with common IO devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four |
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