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Partname:CY14B104N
Description:4 Mbit (512K x 8/256K x 16) nvSRAM
Manufacturer:Cypress Semiconductor
Datasheet:PDF (797K).
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The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world's most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Click here to download CY14B104N Datasheet
Click here to download CY14B104N Datasheet
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