W6NXD3J-0000 Datasheet - Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition from

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Partname:	W6NXD3J-0000
Description:	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Manufacturer:
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Datasheet:	PDF (279K). Click here to download ^*)

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