W4NXD8C-0000 Datasheet - Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition from

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Partname:	W4NXD8C-0000
Description:	Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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Datasheet:	PDF (279K). Click here to download ^*)

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