The BS62LV4007 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 2.0uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) , and active LOW output enable (OE) and three-state output drivers.