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Partname: | BS616UV8011 |
Description: | Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit |
Manufacturer: | Brilliance Semiconductor, Inc. |
Datasheet: | PDF (221K). Click here to download *) |
The BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. |
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Click here to download BS616UV8011 Datasheet*) |
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