The BS616UV4010 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.20uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.