The BS616UV2019 is a high performance, ultra low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.2uA at 2.0V/25OC and maximum access time of 85ns at 85OC.