The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.01uA and maximum access time of 150ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.