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Partname:BS616LV8021AI
Description:70/100ns 20mA 2.7-3.6V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable
Manufacturer:Brilliance Semiconductor, Inc.
Package:BGA
Pins:48
Oper. temp.:-40 to 85
Datasheet:PDF (205K).
Click here to download *)

The BS616LV8021 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1uA and maximum access time of 70/100ns in 3.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616LV8021 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV8021 is available in 48-pin BGA type.

Click here to download BS616LV8021AI Datasheet
Click here to download BS616LV8021AI Datasheet
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