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Partname:BS616LV4021DI
Description:70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
Manufacturer:Brilliance Semiconductor, Inc.
Package:DICE
Pins:48
Oper. temp.:-40 to 85
Datasheet:PDF (224K).
Click here to download *)

The BS616LV4021 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.25uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616LV4021 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV4021 is available in DICE form and 48-ball BGA type.

Click here to download BS616LV4021DI Datasheet
Click here to download BS616LV4021DI Datasheet
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