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Partname:BS616LV4010DC
Description:70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit
Manufacturer:Brilliance Semiconductor, Inc.
Package:DICE
Pins:48
Oper. temp.:0 to 70
Datasheet:PDF (227K).
Click here to download *)

The BS616LV4010 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.

Click here to download BS616LV4010DC Datasheet
Click here to download BS616LV4010DC Datasheet
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