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Partname: | BS616LV4010DC |
Description: | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit |
Manufacturer: | Brilliance Semiconductor, Inc. |
Package: | DICE |
Pins: | 48 |
Oper. temp.: | 0 to 70 |
Datasheet: | PDF (227K). Click here to download *) |
The BS616LV4010 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers. |
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Click here to download BS616LV4010DC Datasheet*) |
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