The BS616LV2025 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/55 ns in 5V operation. Easy memory expansion is provided by active HIGH chip enable2(CE2), active LOW chip enable1(CE1), active LOW output enable(OE) and three-state output drivers. The BS616LV2025 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2025 is available in DICE form and 48-pin BGA type.