The BS616LV2019 is a high performance , very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.3uA at 3.0V /25oC and maximum access time of 55ns at 2.7V / 85oC. Easy memory expansion is provided by active LOW chip enable (CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2019 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2019 is available in DICE form , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package.