The BS616LV2018 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers.