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Partname: | BS616LV2012AI |
Description: | 70/100ns 2.7-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit |
Manufacturer: | Brilliance Semiconductor, Inc. |
Package: | BGA |
Pins: | 48 |
Oper. temp.: | -40 to 85 |
Datasheet: | PDF (217K). Click here to download *) |
The BS616LV2012 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.15uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. |
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 Click here to download BS616LV2012AI Datasheet*) |
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