ChipDocs - Datasheet Source for Semiconductor and Electronic Circuit Components
More than
12 925 268 
queries processed
Partname:BS616LV2011DI
Description:70/100ns 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit
Manufacturer:Brilliance Semiconductor, Inc.
Package:DICE
Pins:48
Oper. temp.:-40 to 85
Datasheet:PDF (237K).
Click here to download *)

The BS616LV2011 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers.

Click here to download BS616LV2011DI Datasheet
Click here to download BS616LV2011DI Datasheet
*)
*)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.
Free Electronics Engineering Subscription
Win Win Circuit - PCB,PCBA,Touch Screen,LED Lighting
Win Win Circuit LTD. PCB, PCBA, LCD Module
www.wwteq.com
COPYRIGHT 1997-2024 ChipDocs  ALL RIGHT RESERVED