The BS616LV1012 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.4uA at 3V/25oC and maximum access time of 55ns at 3V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.