The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.1uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.