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Partname:BH616UV8010DI
Description:Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
Manufacturer:Brilliance Semiconductor, Inc.
Datasheet:PDF (138K).
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The BH616UV8010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25OC and maximum access time of 70ns at 1.8V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH616UV8010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH616UV8010 is available in DICE form, JEDEC standard 48-pin TSOP-I and 48-ball BGA package.

Click here to download BH616UV8010DI Datasheet
Click here to download BH616UV8010DI Datasheet
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