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Partname: | 4N600S |
Description: | 600V 4.0A N-channel field effect transistor |
Manufacturer: | |
Package: | TO-263 |
Pins: | 3 |
Oper. temp.: | 0 to 150 |
Datasheet: | PDF (36.8K). Click here to download *) |
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. |
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Click here to download 4N600S Datasheet*) |
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