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Partname: | MT5C2561C-45L/IT |
Description: | 256K x 1 SRAM memory array |
Manufacturer: | |
Package: | DIP |
Pins: | 24 |
Oper. temp.: | -40 to 85 |
Datasheet: | PDF (121K). Click here to download *) |
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. The x1 configuration features separate data input and output. Writing to these devices is accomplished when write enable (WE) and CE inputs are both LOW. Reading is accomplished when WE remains HIGH and CE goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. |
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Click here to download MT5C2561C-45L/IT Datasheet*) |
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