The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current with a fast access time at 40 ns. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The M65609E is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.