The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a final stage for wireless applications requiring high transmit linearity. The input of the PA is matched to 50 ohms and the output can be easily matched for optimum linearity and power performance at the desired frequency of operation between 5.1 and 5.9 GHz.