The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 m and a total gate periphery of 600 m. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.