The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 m and a total gate periphery of 400 m. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.