These devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +0.2V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired. The VGS(th) of these devices are set at +0.0V, which classify them as both enhancement mode and depletion mode devices. When the gate is set at 0.0V, the drain current = +1A @ VDS =1+0.1V, which allow a class of circuits with output voltage level biased at or near input voltage level without voltage level shift. These devices exhibit same well controlled turn-off and sub-threshold characteristics as standard enhancement mode MOSFETs.