The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 V, temperature drift of 0.15 V/C, and hFE matching of 0.7%. Very high hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.