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| Partname: | ADG636YRU |
| Description: | 1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch |
| Manufacturer: | Analog Devices |
| Datasheet: | PDF (147K).
Click here to download *) |
The ADG636 operates from a dual 2.7 V to 5.5 V supply, or from a single supply of +2.7 V to +5.5 V. This switch offers ultralow charge injection of 1.5 pC over the entire signal range and leakage current of 10 pA typical at 25C. It offers on-resistance of 85 typ, which is matched to within 2 between channels. The ADG636 also has low power dissipation yet gives high switching speeds. |
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Click here to download ADG636YRU Datasheet*) |
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