RN1001 series datasheets. Manufacturer: Toshiba.

RN1001 V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor in 3-pin TO-92 package. Datasheet*) RN1002 V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor in 3-pin TO-92 package. Datasheet*) RN1003 V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor in 3-pin TO-92 package. Datasheet*) RN1004 V(cbo): 50V; V(ceo): 50V; V(ebo): 10V; 100mA; 400mW; silicon NPN epitaxial type transistor in 3-pin TO-92 package. Datasheet*) RN1005 V(cbo): 50V; V(ceo): 50V; V(ebo): 5V; 100mA; 400mW; silicon NPN epitaxial type transistor in 3-pin TO-92 package. Datasheet*) RN1006 V(cbo): 50V; V(ceo): 50V; V(ebo): 5V; 100mA; 400mW; silicon NPN epitaxial type transistor in 3-pin TO-92 package. Datasheet*)

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