|
|
2SC3182 datasheet. Manufacturer: Toshiba.
2SC3182 | 180mW; V(cbo): 140V; V(ceo): 140V; V(ebo): 5V; I(c): 10A; 100W; silicon NPN triple diffused type transistor. For power amplifier applications in 3-pin - package. Operational temperature range from -40°C to 85°C. | Datasheet*) |
|
Click here to download Datasheet*) |
*) Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|