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28LV64JC-3 series datasheets. Manufacturer: TURBO.

28LV64JC-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64JC-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64JC-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64JC-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64JI-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64JI-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64JI-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64JI-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64JM-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64JM-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64JM-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64JM-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64PC-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64PC-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64PC-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64PC-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64PI-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64PI-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64PI-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64PI-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64PM-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64PM-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64PM-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64PM-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64SC-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64SC-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64SC-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64SC-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64SI-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64SI-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64SI-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64SI-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64SM-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64SM-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64SM-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64SM-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64TC-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64TC-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64TC-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64TC-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV64TI-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64TI-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64TI-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64TI-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV64TM-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64TM-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64TM-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV64TM-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
There are other manufacturers for this components. For more information please check
28LV64JC-3 (TRBIC)
Click here to download 28LV64JC-3 Datasheet
Click here to download Datasheet
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