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28LV256JC-3 series datasheets. Manufacturer: TURBO.

28LV256JC-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256JC-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256JC-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256JC-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256JI-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256JI-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256JI-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256JI-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256JM-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256JM-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256JM-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256JM-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256PC-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256PC-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256PC-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256PC-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256PI-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256PI-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256PI-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256PI-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256PM-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256PM-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256PM-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256PM-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256SC-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256SC-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256SC-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256SC-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256SI-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256SI-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256SI-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256SI-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256SM-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256SM-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256SM-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256SM-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256TC-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256TC-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256TC-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256TC-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28LV256TI-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256TI-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256TI-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256TI-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28LV256TM-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256TM-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256TM-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28LV256TM-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
There are other manufacturers for this components. For more information please check
28LV256JC-3 (TRBIC)
Click here to download 28LV256JC-3 Datasheet
Click here to download Datasheet
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