28C64AJC-1 series datasheets. Manufacturer: TURBO.

28C64AJC-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64AJC-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64AJC-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64AJC-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64AJI-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64AJI-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64AJI-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64AJI-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64AJM-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64AJM-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64AJM-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64AJM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64APC-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64APC-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64APC-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64APC-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64API-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64API-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64API-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64API-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64APM-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64APM-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64APM-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64APM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ASC-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ASC-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ASC-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ASC-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ASI-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ASI-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ASI-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ASI-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ASM-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ASM-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ASM-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ASM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ATC-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ATC-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ATC-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ATC-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C. Datasheet*) 28C64ATI-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ATI-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ATI-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ATI-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C. Datasheet*) 28C64ATM-1 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ATM-2 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ATM-3 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) 28C64ATM-4 High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C. Datasheet*) There are other manufacturers for this components. For more information please check 28C64AJC-1 (TRBIC)

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