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28C256AJC-1 series datasheets. Manufacturer: TURBO.

28C256AJC-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256AJC-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256AJC-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256AJC-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256AJI-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256AJI-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256AJI-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256AJI-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256AJM-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256AJM-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256AJM-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256AJM-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 32-pin PLCC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256APC-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256APC-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256APC-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256APC-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256API-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256API-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256API-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256API-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256APM-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256APM-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256APM-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256APM-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin PDIP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ASC-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ASC-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ASC-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ASC-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ASI-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ASI-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ASI-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ASI-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ASM-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ASM-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ASM-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ASM-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin SOIC package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ATC-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ATC-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ATC-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ATC-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from 0°C to 70°C.Datasheet*)
28C256ATI-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ATI-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ATI-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ATI-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -40°C to 85°C.Datasheet*)
28C256ATM-1High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ATM-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ATM-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
28C256ATM-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. in 28-pin TSOP package. Operational temperature range from -55°C to 125°C.Datasheet*)
There are other manufacturers for this components. For more information please check
28C256AJC-1 (TRBIC)
Click here to download 28C256AJC-1 Datasheet
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