BDW51A | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Datasheet*) |
SF_BDW51A | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Datasheet*) |
BDW51B | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Datasheet*) |
SF_BDW51B | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Datasheet*) |
BDW51C | Bipolar NPN Device | Datasheet*) |
BDV91 | 60V Vcbo, 10A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
BDV93 | 80V Vcbo, 10A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
BDV95 | 100V Vcbo, 10A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C. | Datasheet*) |
BDW21 | 45V Vcbo, 10A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 175°C. | Datasheet*) |
BDW21A | 60V Vcbo, 10A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 175°C. | Datasheet*) |
BDW21B | 80V Vcbo, 10A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 175°C. | Datasheet*) |
BDW30 | 40A Ic Low frequency power silicon NPN transistor | Datasheet*) |
BDW32 | 40A Ic Low frequency power silicon NPN transistor | Datasheet*) |
BDW34 | 40A Ic Low frequency power silicon NPN transistor | Datasheet*) |
BDW36 | 40A Ic Low frequency power silicon NPN transistor | Datasheet*) |
BDW51 | 45V Vcbo, 15A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 175°C. | Datasheet*) |
BDX10 | 100V Vcbo, 15A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 175°C. | Datasheet*) |
BDX13 | 50V Vcbo, 15A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 175°C. | Datasheet*) |
There are other manufacturers for this components. For more information please check BDW51 (CENTR) BDW51 (SGS-Thomson Microelectronics)
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