K4R881869 series datasheets. Manufacturer: Samsung Electronic.

K4R881869M-NCG6 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. in 56-pin microBGA(normal CSP) package. Operational temperature range from 0°C to 100°C. Datasheet*) K4R881869M-NCK7 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. in 56-pin microBGA(normal CSP) package. Operational temperature range from 0°C to 100°C. Datasheet*) K4R881869M-NCK8 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. in 56-pin microBGA(normal CSP) package. Operational temperature range from 0°C to 100°C. Datasheet*) K4R571669D 256/288Mbit RDRAM(D-die) Datasheet*) K4R881869D 256/288Mbit RDRAM(D-die) Datasheet*) K4R881869 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Datasheet*) K4R881869M 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Datasheet*) K4R881869M-NbCcG6 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Datasheet*)

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