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K4R881869 series datasheets. Manufacturer: Samsung Electronic.

K4R881869M-NCG6512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. in 56-pin microBGA(normal CSP) package. Operational temperature range from 0°C to 100°C.Datasheet*)
K4R881869M-NCK7512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. in 56-pin microBGA(normal CSP) package. Operational temperature range from 0°C to 100°C.Datasheet*)
K4R881869M-NCK8512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. in 56-pin microBGA(normal CSP) package. Operational temperature range from 0°C to 100°C.Datasheet*)
K4R571669D256/288Mbit RDRAM(D-die)Datasheet*)
K4R881869D256/288Mbit RDRAM(D-die)Datasheet*)
K4R881869288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTMDatasheet*)
K4R881869M288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTMDatasheet*)
K4R881869M-NbCcG6288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTMDatasheet*)
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