K4E160811 series datasheets. Manufacturer: Samsung Electronic.

K4E160811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. in 28-pin SOJ package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E160811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. in 28-pin TSOP-II package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E160812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. in 28-pin SOJ package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E160812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. in 28-pin TSOP-II package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E170811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. in 28-pin SOJ package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E170811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. in 28-pin TSOP-II package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E170812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. in 28-pin SOJ package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E170812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. in 28-pin TSOP-II package. Operational temperature range from 0°C to 70°C. Datasheet*) K4E160811D 2M x 8Bit CMOS Dynamic RAM with Extended Data Out Datasheet*) K4E160812D 2M x 8Bit CMOS Dynamic RAM with Extended Data Out Datasheet*) K4E170811D 2M x 8Bit CMOS Dynamic RAM with Extended Data Out Datasheet*) K4E170812D 2M x 8Bit CMOS Dynamic RAM with Extended Data Out Datasheet*)

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