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BD241 series datasheets. Manufacturer: Samsung Electronic.

BD23955V Vcbo, 2.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD239A80V Vcbo, 2.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD239B80V Vcbo, 2.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD239C100V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD24145V Vcbo, 5.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
KSC30745A Ic Low frequency power silicon NPN transistorDatasheet*)
KSC3233500V Vcbo, 2.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
KSD122160V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
KSD401200V Vcbo, 2.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
KSH2005A Ic Low frequency power silicon NPN transistorDatasheet*)
KSH313A Ic Low frequency power silicon NPN transistorDatasheet*)
KSH31C3A Ic Low frequency power silicon NPN transistorDatasheet*)
KSH340500mA Ic Low frequency power silicon NPN transistorDatasheet*)
KSH41C6A Ic Low frequency power silicon NPN transistorDatasheet*)
KSH471A Ic Low frequency power silicon NPN transistorDatasheet*)
KSH501A Ic Low frequency power silicon NPN transistorDatasheet*)
TIP48400V Vcbo, 1.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 140°C.Datasheet*)
BD241A60V Vcbo, 5.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD241B80V Vcbo, 5.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD241C100V Vcbo, 5.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD24345V Vcbo, 8.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD243A60V Vcbo, 8.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD243B80V Vcbo, 8.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD243C100V Vcbo, 8.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BD53345V Vcbo, 8.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 140°C.Datasheet*)
BD53560V Vcbo, 8.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 140°C.Datasheet*)
BD53780V Vcbo, 8.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 140°C.Datasheet*)
KSC2334150V Vcbo, 7.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
KSE3055T10A Ic Low frequency power silicon NPN transistorDatasheet*)
KSE44H10A Ic Low frequency power silicon NPN transistorDatasheet*)
There are other manufacturers for this components. For more information please check
BD241 (Advanced Semiconductor, Inc)
BD241 (BOCA)
BD241 (Continental Device India Ltd)
BD241 (Fairchild Semiconductor)
BD241 (GESS)
BD241 (Harris Semiconductor)
BD241 (ISKRA)
BD241 (ME)
BD241 (MOSP)
BD241 (Motorola)
BD241 (National Semiconductor)
BD241 (ON Semiconductor)
BD241 (Philips Semiconductors)
BD241 (Power Innovations)
BD241 (Semelab Plc.)
BD241 (SINC)
BD241 (SGS-Thomson Microelectronics)
BD241 (TEL)
BD241 (TRSYS)
BD241 (USHA)
Click here to download BD241 Datasheet
Click here to download Datasheet
*)

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