VP1106N1 series datasheets. Manufacturer: SUTEX.

VP1106N1 P-channel enhancement-mode vertical DMOS power FET. -60 V, 2 Ohm, -5 A in 2-pin TO-3 package. Operational temperature range from -55°C to 150°C. Datasheet*) VP1106N2 P-channel enhancement-mode vertical DMOS power FET. -60 V, 2 Ohm, -5 A in 3-pin TO-39 package. Operational temperature range from -55°C to 150°C. Datasheet*) VP1106N5 P-channel enhancement-mode vertical DMOS power FET. -60 V, 2 Ohm, -5 A in 3-pin TO-220 package. Operational temperature range from -55°C to 150°C. Datasheet*) VP1106ND P-channel enhancement-mode vertical DMOS power FET. -60 V, 2 Ohm, -5 A Operational temperature range from -55°C to 150°C. Datasheet*) VP1110N1 P-channel enhancement-mode vertical DMOS power FET. -100 V, 2 Ohm, -5 A in 2-pin TO-3 package. Operational temperature range from -55°C to 150°C. Datasheet*) VP1110N2 P-channel enhancement-mode vertical DMOS power FET. -100 V, 2 Ohm, -5 A in 3-pin TO-39 package. Operational temperature range from -55°C to 150°C. Datasheet*) VP1110N5 P-channel enhancement-mode vertical DMOS power FET. -100 V, 2 Ohm, -5 A in 3-pin TO-220 package. Operational temperature range from -55°C to 150°C. Datasheet*) VP1110ND P-channel enhancement-mode vertical DMOS power FET. -100 V, 2 Ohm, -5 A Operational temperature range from -55°C to 150°C. Datasheet*)

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