DRA8 | Silicon diffused junction type, 8,0A reverse blocking thyristor in 3-pin 1104 package. | Datasheet*) |
DRA01 | 100mA I[T] Max. Silicon Controlled Rectifier | Datasheet*) |
DRA01B | 100V V[drm] Max., .10A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -30°C to 90°C. | Datasheet*) |
DRA01C | 200V V[drm] Max., .10A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -30°C to 90°C. | Datasheet*) |
DRA01E | 400V V[drm] Max., .10A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -30°C to 90°C. | Datasheet*) |
DRA05E1 | 500mA I[T] Max. Silicon Controlled Rectifier | Datasheet*) |
DRA05E2 | 500mA I[T] Max. Silicon Controlled Rectifier | Datasheet*) |
DRA05E5 | 500mA I[T] Max. Silicon Controlled Rectifier | Datasheet*) |
DRA5B | 100V V[drm] Max., 5.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -40°C to 125°C. | Datasheet*) |
DRA5C | 200V V[drm] Max., 5.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -40°C to 125°C. | Datasheet*) |
DRA5E | 400V V[drm] Max., 5.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -30°C to 125°C. | Datasheet*) |
DRA5G | 600V V[drm] Max., 5.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -30°C to 125°C. | Datasheet*) |
DRA8B | 100V V[drm] Max., 8.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -40°C to 125°C. | Datasheet*) |
DRA8C | 200V V[drm] Max., 8.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -40°C to 125°C. | Datasheet*) |
DRA8E | 400V V[drm] Max., 8.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -40°C to 125°C. | Datasheet*) |
DRA8G | 600V V[drm] Max., 8.0A I[T] Max. Silicon Controlled Rectifier Operational temperature range from -40°C to 125°C. | Datasheet*) |