PHB8ND50 series datasheets. Manufacturer: Philips Semiconductors.

PHB8ND50E 500 V, power MOS transistor FREDFET, avalanche energy rated in 3-pin SOT package. Operational temperature range from -55°C to 150°C. Datasheet*) PHP8ND50E 500 V, power MOS transistor FREDFET, avalanche energy rated in 3-pin SOT package. Operational temperature range from -55°C to 150°C. Datasheet*) PHW8ND50E 500 V, power MOS transistor FREDFET, avalanche energy rated in 3-pin SOT package. Operational temperature range from -55°C to 150°C. Datasheet*) PHB8ND50E PowerMOS transistor. FREDFET, avalanche energy rated. in 3-pin SOT404 package. Operational temperature range from -55°C to 150°C. Datasheet*) PHP8ND50E PowerMOS transistor. FREDFET, avalanche energy rated. in 3-pin SOT78 package. Operational temperature range from -55°C to 150°C. Datasheet*) PHP8ND50E PowerMOS transistor. FREDFET, avalanche energy rated. in 3-pin TO220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) PHW8ND50E PowerMOS transistor. FREDFET, avalanche energy rated. in 3-pin SOT429 package. Operational temperature range from -55°C to 150°C. Datasheet*) PHW8ND50E PowerMOS transistor. FREDFET, avalanche energy rated. in 3-pin TO247 package. Operational temperature range from -55°C to 150°C. Datasheet*)

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