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BDT31 series datasheets. Manufacturer: Philips Semiconductors.

BDT3180V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31A100V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31B120V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31C140V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31AF100V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31BF120V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31CF140V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31DF160V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
BDT31F80V Vcbo, 3.0A Ic Low frequency power silicon NPN transistor Operational temperature range from 0°C to 150°C.Datasheet*)
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*)

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