L8801 series datasheets. Manufacturer: POFET.

L88016 30 Watt, silicon gate enhancement mode RF power LDMOS transistor in 4-pin -- package. Operational temperature range from -65°C to 150°C. Datasheet*) L8801P 10 Watt, silicon gate enhancement mode RF power LDMOS transistor in 8-pin SO-8 package. Operational temperature range from -65°C to 150°C. Datasheet*)

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