F1001 series datasheets. Manufacturer: POFET.

F1001 Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor in 4-pin -- package. Operational temperature range from -65°C to 150°C. Datasheet*) F1001C Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor in 6-pin -- package. Operational temperature range from -65°C to 150°C. Datasheet*)

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