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NTE588 series datasheets. Manufacturer: NTE.

NTE588Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. in 2-pin -- package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5864Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C.Datasheet*)
NTE5865Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C.Datasheet*)
NTE5884Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C.Datasheet*)
NTE5885Silicon power rectifier diode. Anode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C.Datasheet*)
NTE5888Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C.Datasheet*)
NTE5889Silicon power rectifier diode. Anode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C.Datasheet*)
NTE5810Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5811Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5870Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5871Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5872Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5873Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5874Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5875Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5876Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5877Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5878Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5879Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5880Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5881Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5882Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5883Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5886Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5887Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5890Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5891Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
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