| NTE588 | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. in 2-pin -- package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
| NTE5864 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5865 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5884 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5885 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5888 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5889 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5810 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5811 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5870 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5871 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5872 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5873 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5874 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5875 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5876 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5877 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5878 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5879 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5880 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5881 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5882 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5883 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5886 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5887 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5891 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
