| NTE586 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 3.0A. in 2-pin -- package. Operational temperature range from -65°C to 125°C. | Datasheet*) |
| NTE5850 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5851 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5852 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5853 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5854 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5855 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5856 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5857 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5858 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5859 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5860 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5861 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5862 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5863 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5866 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5867 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5868 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5869 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C. | Datasheet*) |
| NTE5864 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5865 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5884 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5885 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 600V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5888 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
| NTE5889 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 1200V. Max forward current 30A. in 2-pin DO4 package. Operational temperature range from -40°C to 175°C. | Datasheet*) |
