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NTE585 series datasheets. Manufacturer: NTE.

NTE585Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A. in 2-pin -- package. Operational temperature range from -65°C to 125°C.Datasheet*)
NTE5850Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5851Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5852Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5853Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5854Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5855Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5856Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5857Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5858Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5859Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5860Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5861Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5862Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5863Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5866Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5867Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5868Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5869Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
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